GENERAL DESCRIPTION
The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC930A amplifier inputs/outputs (I/Os) are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm (12 mils).
FEATURES
High output power for 1 dB compression (P1dB): 22 dBm
High saturated output power (PSAT): 24 dBm
High gain: 13 dB
High output third-order intercept (IP3): 33.5 dBm
Supply voltage: 10 V at 175 mA
50 Ω matched input/output
Die size: 2.82 mm × 1.50 mm × 0.1 mm
APPLICATIONS
Test instrumentation
Microwave radios and VSATs
Military and space
Telecommunications infrastructure
Fiber optics