General Description
The HMC559 is a GaAs MMIC PHEMT Distributed Power Amplifi er die which operates between DC and 20 GHz. The amplifi er provides 14 dB of gain, +36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10V supply. Gain fl atness is slightly positive from 4 to 20 GHz making the HMC559 ideal for EW, ECM and radar driver amplifi er applications. The HMC559 amplifi er I/O’s are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).

FEATUREs
   P1dB Output Power: +28 dBm
   Gain: 14 dB
   Output IP3: +36 dBm
   Supply Voltage: +10V @ 400 mA
   50 Ohm Matched Input/Output
   Die Size: 3.12 x 1.50 x 0.1 mm

Typical Applications
The HMC559 wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics