General Description
The hmC930 is a GaAs mmiC phemT Distributed power Amplifier which operates between DC and 40 Ghz. The amplifier provides 13 dB of gain, 33.5 dBm output ip3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The hmC930 exhibits a slightly positive gain slope from 8 to 32 Ghz, making it ideal for ew, eCm, radar and test equipment applications. The hmC930 amplifier i/os are internally matched to 50 ohms facilitating integration into mutli-Chip-modules (mCms). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

FEATUREs
   high p1dB output power: 22 dBm
   high psat output power: 24 dBm
   high Gain: 13 dB
   high output ip3: 33.5 dBm
   supply Voltage: +10 V @ 175 mA
   50 ohm matched input/output
   Die size: 2.82 x 1.50 x 0.1 mm

Typical Applications
The hmC930 is ideal for:
• Test instrumentation
• microwave radio & VsAT
• military & space
• Telecom infrastructure
• fiber optics