Parallel Resonance Inverter Switching Applications

• FRD included between emitter and collector
• Enhancement-mode
• High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A)
                     FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs)
• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)