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10J303 데이터시트

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Toshiba

10J303

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

Match & Start : 10J303

Toshiba

10J303

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

Toshiba

10J301

Discrete IGBT - 30G124 ~ 30F125

SUNMATE electronic Co., LTD

AXIAL LEADED SILICON RECTIFIER DIODES

National Instruments Corporation

Standard Recovery Diode

Toshiba

Discrete IGBT - 30G124 ~ 30F125

National Instruments Corporation

Standard Recovery Diode

Nihon Inter Electronics

DIODE

National Instruments Corporation

Standard Recovery Diode

Nihon Inter Electronics

DIODE

Toshiba

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

1 2

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