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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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15J331

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

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High Power Switching Applications
Motor Control Applications

• Fourth-generation IGBT
• Enhancement mode type
• High speed: tf = 0.10 μs (typ.)
• Low saturation voltage: VCE (sat) = 1.75 V (typ.)
• FRD included between emitter and collector

 

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