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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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GP200MHS12 데이터시트 - Dynex Semiconductor

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GP200MHS12

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Dynex
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The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.


FEATURES
■ Non Punch Through Silicon
■ Isolated Copper Baseplate
■ Low Inductance Internal Construction


APPLICATIONS
■ High Power Inverters
■ Motor Controllers
■ Induction Heating
■ Resonant Converters

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