GP200MHS12 데이터 시트보기 (PDF) - Dynex Semiconductor
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GP200MHS12 Datasheet PDF : 10 Pages
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GP200MHS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
V
GES
IC
IC(PK)
Pmax
Visol
Collector-emitter voltage
VGE = 0V
Gate-emitter voltage
-
Collector current
DC, Tcase = 72˚C
Peak collector current
1ms, T = 72˚C
case
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1200 V
±20 V
200 A
400 A
1490 W
2500 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Tj
Junction temperature
Transistor
Diode
T
Storage temperature range
stg
-
Screw torque
-
Mounting - M6
Electrical connections - M6
Min. Max. Units
-
84 ˚C/kW
-
160 ˚C/kW
-
15 ˚C/kW
-
150 ˚C
-
125 ˚C
–40 125 ˚C
-
5
Nm
-
5
Nm
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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