G50N60HS 데이터시트 - Infineon Technologies
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G50N60HS
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Infineon Technologies
•30% lower Eoffcompared to previous generation
•Short circuit withstand time – 10 µs
•Designed for operation above 30 kHz
•NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoffincrease with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
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