G50N60HS 데이터 시트보기 (PDF) - Infineon Technologies

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G50N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SGW50N60HS

15V

12V

120V

480V

9V

6V

3V

0V

0nC 50nC 100nC 150nC 200nC 250nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=50 A)

Ciss

1nF

100pF

Coss

Crss

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

15µs

10µs

5µs

0µs

10V

11V

12V

13V

14V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ=25°C)

700A

600A

500A

400A

300A

200A

100A

0A

10V

12V

14V

16V

18V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE ≤ 600V, Tj ≤ 150°C)

Power Semiconductors

8

Rev. 2.3 Nov 09

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