G50N60HS 데이터 시트보기 (PDF) - Infineon Technologies

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G50N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SGW50N60HS

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Leakage inductance Lσ =55nH

a nd Stray capacity Cσ =40pF.

Power Semiconductors

10

Rev. 2.3 Nov 09

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