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EN29F080 데이터시트 - Eon Silicon Solution Inc.

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부품명
EN29F080

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37 Pages

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제조사
Eon
Eon Silicon Solution Inc. Eon

GENERAL DESCRIPTION
The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F080 features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.


FEATURES
• 5.0V ± 10%, single power supply operation
   - Minimizes system level power requirements
• Manufactured on 0.35 µm process technology
• High performance
   - Access times as fast as 45 ns
• Low power consumption
   - 25 mA typical active read current
   - 30 mA typical program/erase current
   - 1 µA typical standby current (standard access time to active mode)
• Flexible Sector Architecture:
   - 16 uniform sectors of 64Kbytes each
   - Supports full chip erase
   - Individual sector erase supported
   - Group sector protection:
      Hardware method of locking of sector groups
      to prevent any program or erase operations
      within that sector group
      Additionally, temporary Sector Group
      Unprotect allows code changes in previously
      locked sectors
• High performance program/erase speed
   - Byte program time: 10µs typical
   - Sector erase time: 500ms typical
   - Chip erase time: 16s typical
• Low Standby Current
   - 1µA CMOS standby current-typical
   - 1mA TTL standby current
• Low Power Active Current
   - 30mA active read current
   - 30mA program/erase current
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle bits feature
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
   Read and program another Sector during Erase Suspend Mode
• 0.35 µm double-metal double-poly triple-well CMOS Flash Technology
• Low Vcc write inhibit < 3.2V
• >100K program/erase endurance cycle
• Ready/Busy# output (RY/BY#)
   - Provides a hardware method for detecting program or erase cycle completion.
• Hardware reset pin (Reset#)
   - Resets internal state machine to read mode

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제조사
8 Megabit (1024K x 8-bit) Flash Memory
Eon Silicon Solution Inc.
8M-bit (1024K x 8) Serial Flash Memory
ON Semiconductor
8M-bit (1024K x 8) Serial Flash Memory
ON Semiconductor
8M-bit (1024K x 8) Serial Flash Memory
ON Semiconductor
Serial Flash Memory 8M-bit (1024K x 8)
ON Semiconductor
8M-bit (1024K x 8) Serial Flash Memory
ON Semiconductor
8M-bit (1024K x 8) Serial Flash Memory
ON Semiconductor
8M-bit (1024K x 8) Serial Flash Memory
ON Semiconductor
8M-bit (1024K x 8) Serial Flash Memory
ON Semiconductor
8M-bit (1024K x 8) Serial Flash Memory
ON Semiconductor

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