EN29F080 데이터 시트보기 (PDF) - Eon Silicon Solution Inc.

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EN29F080

8 Megabit (1024K x 8-bit) Flash Memory

Eon Silicon Solution Inc. 

EN29F080

8 Megabit (1024K x 8-bit) Flash Memory

EN29F080

FEATURES

• 5.0V ± 10%, single power supply operation

- Minimizes system level power requirements

• Manufactured on 0.35 µm process technology

• High performance

- Access times as fast as 45 ns

• Low power consumption

- 25 mA typical active read current

- 30 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• Flexible Sector Architecture:

- 16 uniform sectors of 64Kbytes each

- Supports full chip erase

- Individual sector erase supported

- Group sector protection:

Hardware method of locking of sector groups

to prevent any program or erase operations

within that sector group

Additionally, temporary Sector Group

Unprotect allows code changes in previously

locked sectors

• High performance program/erase speed

- Byte program time: 10µs typical

- Sector erase time: 500ms typical

- Chip erase time: 16s typical

• Low Standby Current

- 1µA CMOS standby current-typical

- 1mA TTL standby current

• Low Power Active Current

- 30mA active read current

- 30mA program/erase current

• JEDEC Standard program and erase

commands

• JEDEC standard DATA polling and toggle

bits feature

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

• 0.35 µm double-metal double-poly

triple-well CMOS Flash Technology

• Low Vcc write inhibit < 3.2V

• >100K program/erase endurance cycle

• Ready/Busy# output (RY/BY#)

- Provides a hardware method for detecting

program or erase cycle completion.

• Hardware reset pin (Reset#)

- Resets internal state machine to read mode

GENERAL DESCRIPTION

The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory. Organized

into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of

64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F080 features 5.0V

voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT

states in high-performance microprocessor systems.

The EN29F080 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable ( W E )

controls, which eliminate bus contention issues. This device is designed to allow either single (or

multiple) Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain a

minimum of 100K program/erase cycles on each Sector.

4800 Great America Parkway, Suite 202

1

Santa Clara, CA 95054

Rev. C, Issue Date: 2001/07/05

Tel: 408-235-8680

Fax: 408-235-8685

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