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LE25S80QH 데이터시트 - ON Semiconductor

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LE25S80QH

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23 Pages

File Size
195.9 kB

제조사
ONSEMI
ON Semiconductor ONSEMI

Overview
The LE25S80QH is a SPI bus flash memory device with a 8M bit (1024K x 8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S80QH is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices, which are required to have increasingly more compact dimensions. The LE25S80QH also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.

Function
• Read/write operations enabled by single 1.8V power supply : 1.65 to 1.95V supply voltage range
• Operating frequency : 40MHz
• Temperature range : –40 to +90°C
• Serial interface : SPI mode 0, mode 3 supported
• Sector size : 4K bytes/small sector, 64K bytes/sector
• Small sector erase, sector erase, chip erase functions
• Page program function (256 bytes / page)
• Block protect function
• Data retention period : 20 years
• Status functions : Ready/busy information, protect information
• Highly reliable read/write
   Number of rewrite times : 100,000 times
   Small sector erase time : 40ms (typ.), 150ms (max.)
   Sector erase time : 80ms (typ.), 250ms (max.)
   Chip erase time : 500ms (typ.), 6.0s (max.)
   Page program time : 0.8ms/256 bytes (typ.), 1.0ms/256 bytes (max.)
• Package : VDFN8 3x4, 0.65P/VSON8J(4.0 x 3.0)


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