FEATURES
• NON-HERMETIC 180MIL METAL FLANGE PACKAGE
• +31.0 dBm TYPICAL OUTPUT POWER
• 16.5 dB TYPICAL POWER GAIN AT 2GHz
• 0.3 x 2400 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY