Low Distortion GaAs Power FET
• +18.0dBm TYPICAL OUTPUT POWER
• 11.0dB TYPICAL POWER GAIN AT 12GHz
• TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz
• 0.3 X 240 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 5mA PER BIN RANGE