[Excelics]

Low Distortion GaAs Power FET

• +35.5dBm TYPICAL OUTPUT POWER
• 17.5dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 7200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 120mA PER BIN RANGE