EFA080A 데이터시트 - Excelics Semiconductor, Inc.
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EFA080A
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Excelics Semiconductor, Inc.
Low Distortion GaAs Power FET
• +26.0dBm TYPICAL OUTPUT POWER
• 10.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 15mA PER BIN RANGE
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