Low Distortion GaAs Power FET
• HERMETIC 100mil CERAMIC FLANGE PACKAGE
• +25.0dBm TYPICAL OUTPUT POWER
• 8.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY