Functional Description
The CY7C1480BV25/CY7C1482BV25/CY7C1486BV25[1] SRAM integrates 2 M × 36/4 M × 18/1 M × 72 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin.

FEATUREs
■ Supports bus operation up to 250 MHz
■ Available speed grades are 250, 200, and 167 MHz
■ Registered inputs and outputs for pipelined operation
■ 2.5-V core power supply
■ 2.5-V I/O operation
■ Fast clock-to-output time
   ❐ 3.0 ns (for 250 MHz device)
■ Provide high performance 3-1-1-1 access rate
■ User selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences
■ Separate processor and controller address strobes
■ Synchronous self timed writes
■ Asynchronous output enable
■ Single cycle chip deselect
■ CY7C1480BV25, CY7C1482BV25 available in
   JEDEC-standard Pb-free 100-pin thin quad flat pack (TQFP),
   Pb-free and non Pb-free 165-ball fine-pitch ball grid array
   (FBGA) package. CY7C1486BV25 available in Pb-free and
   non-Pb-free 209-ball FBGA package
■ IEEE 1149.1 JTAG-Compatible Boundary Scan
■ “ZZ” sleep mode option