CY7C1486BV25(2011) 데이터 시트보기 (PDF) - Cypress Semiconductor
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CY7C1486BV25
(Rev.:2011)
(Rev.:2011)
Cypress Semiconductor
CY7C1486BV25 Datasheet PDF : 34 Pages
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CY7C1480BV25
CY7C1482BV25, CY7C1486BV25
Single Write Accesses Initiated by ADSC
ADSC write accesses are initiated when the following conditions
are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted
HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the
appropriate combination of the write inputs (GW, BWE, and
BWX) are asserted active to conduct a write to the desired
byte(s). ADSC-triggered write accesses need a single clock
cycle to complete. The address presented to A is loaded into the
address register and the address advancement logic while being
delivered to the memory array. The ADV input is ignored during
this cycle. If a global write is conducted, the data presented to
the DQs is written into the corresponding address location in the
memory core. If a byte write is conducted, only the selected bytes
are written. Bytes not selected during a byte write operation
remain unaltered. A synchronous self-timed write mechanism
has been provided to simplify the write operations.
Because CY7C1480BV25/CY7C1482BV25/CY7C1486BV25 is
a common I/O device, the Output Enable (OE) must be
deasserted HIGH before presenting data to the DQs inputs.
Doing so tristates the output drivers. As a safety precaution, DQs
are automatically tristated whenever a write cycle is detected,
regardless of the state of OE.
Burst Sequences
The
CY7C1480BV25/CY7C1482BV25/CY7C1486BV25
provides a two-bit wraparound counter, fed by A1: A0, that
implements either an interleaved or linear burst sequence. The
interleaved burst sequence is designed specifically to support
Intel Pentium applications. The linear burst sequence is
designed to support processors that follow a linear burst
sequence. The burst sequence is user selectable through the
MODE input.
Asserting ADV LOW at clock rise automatically increments the
burst counter to the next address in the burst sequence. Both
read and write burst operations are supported.
Sleep Mode
The ZZ input pin is asynchronous. Asserting ZZ places the
SRAM in a power conservation “sleep” mode. Two clock cycles
are required to enter into or exit from this “sleep” mode. While in
this mode, data integrity is guaranteed. Accesses pending when
entering the “sleep” mode are not considered valid nor is the
completion of the operation guaranteed. The device must be
deselected prior to entering the “sleep” mode. CE1, CE2, CE3,
ADSP, and ADSC must remain inactive for the duration of tZZREC
after the ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
00
01
10
01
00
11
10
11
00
11
10
01
Fourth
Address
A1: A0
11
10
01
00
Linear Burst Address Table
(MODE = GND)
First
Address
A1: A0
00
01
10
11
Second
Address
A1: A0
01
10
11
00
Third
Address
A1: A0
10
11
00
01
Fourth
Address
A1: A0
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
IDDZZ
tZZS
tZZREC
tZZI
tRZZI
Description
Sleep mode standby current
Device operation to ZZ
ZZ recovery time
ZZ active to sleep current
ZZ inactive to exit sleep current
Test Conditions
ZZ > VDD– 0.2 V
ZZ > VDD – 0.2 V
ZZ < 0.2 V
This parameter is sampled
This parameter is sampled
Min
–
–
2tCYC
–
0
Max
120
2tCYC
–
2tCYC
–
Unit
mA
ns
ns
ns
ns
Document Number: 001-15143 Rev. *H
Page 10 of 34
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