Functional Description
The CY7C1416KV18, CY7C1427KV18, CY7C1418KV18, and CY7C1420KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter.

FEATUREs
■ 36-Mbit density (4 M × 8, 4 M × 9, 2 M × 18, 1 M × 36)
■ 333 MHz clock for high bandwidth
■ 2-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz
■ Two input clocks (K and K) for precise DDR timing
   ❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high speed systems
■ Synchronous internally self-timed writes
■ DDR II operates with 1.5 cycle read latency when DOFF is asserted HIGH
■ Operates similar to DDR-I device with 1 cycle read latency when DOFF is asserted LOW
■ 1.8 V core power supply with HSTL inputs and outputs
■ Variable drive HSTL output buffers
■ Expanded HSTL output voltage (1.4 V to VDD)
   ❐ Supports both 1.5 V and 1.8 V IO supply
■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 compatible test access port
■ Phase locked loop (PLL) for accurate data placement