CP323 데이터시트 - Central Semiconductor
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CP323
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Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 26.8 x 26.8 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 4.2 x 4.2 MILS
Emitter Bonding Pad Area 4.3 x 4.3 MILS
Top Side Metalization Al -
Back Side Metalization Au - 18,000Å
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