CP257 데이터시트 - Central Semiconductor
부품명
CP257
Other PDF
no available.
PDF
page
2 Pages
File Size
212.6 kB
제조사
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 20 x 20 MILS
Die Thickness 8.0 MILS
Base Bonding Pad Area 4.9 x 4.9 MILS
Emitter Bonding Pad Area 6.4 x 6.4 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 16,000Å
부품명
상세내역
PDF
제조사
Small Signal Transistor NPN - High Voltage Transistor Chip ( Rev : 2005 )
Central Semiconductor
Small Signal Transistor NPN - High Voltage Transistor Chip ( Rev : 2010 )
Central Semiconductor
Small Signal Transistor NPN - Silicon Darlington Transistor Chip ( Rev : 2002 )
Central Semiconductor
Share Link: