Linear Low Noise SiGe:C Bipolar RF Transistor

• For medium power amplifiers and driver stages
• Based on Infineon s reliable high volume Silicon
   Germanium technology
• High OIP3 and P-1dB
• Ideal for low phase noise oscilators
• Maxim. available Gain G
   ma = 21.5 dB at 1.8 GHz
   Minimun noise figure NFmin = 0.8 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
   flat package with visible leads
• Qualification report according to AEC-Q101 available