NPN Silicon Germanium RF Transistor

Target data sheet
• High gain ultra low noise RF transistor
   for low current operation
• Provides outstanding performance for
   a wide range of wireless applications
   up to 10 GHz and more
• Optimum gain and noise figure
   at low current operation
• Ideal for WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
   Outstanding noise figure F = 0.8 dB at 6 GHz
• High maximum stable and available gain
   Gms = 24 dB at 1.8 GHz, Gma = 16.5 dB at 6 GHz
• 150 GHz fT-Silicon Germanium technology
• Extremly small and flat leadless package
   height 0.32 mm max.
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101