BFP650E6327 데이터시트 - Infineon Technologies
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BFP650E6327
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Infineon Technologies
NPN Silicon Germanium RF Transistor
Preliminary data
• For high power amplifiers
• Ideal for low phase noise oscilators
• Maxim. available Gain Gma = 21 dB at 1.8 GHz
Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz fT- Silicon Germanium technology.
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