General Description
The AO4617 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AO4617 is Pb-free (meets ROHS & Sony 259 specifications). AO4617L is a Green Product ordering option. AO4617 and AO4617L are electrically identical.

FEATUREs
    n-channel                                   p-channel
    VDS (V) = 40V                           -40V
    ID = 6A (VGS=10V)                   -5A (VGS = -10V)
    RDS(ON)                                   RDS(ON)
    < 32mΩ (VGS=10V)                  < 48mΩ (VGS = -10V)
    < 45mΩ (VGS=4.5V)                 < 75mΩ (VGS = -4.5V)

    ESD rating: 3000V (HBM)
                                                              UIS TESTED!
                                                    Rg,Ciss,Coss,Crss Tested