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![AOSMD](/logo/AOSMD.png)
Alpha and Omega Semiconductor
![AOSMD](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
General Description
The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical.
-RoHS compliant
-AO5600EL is Halogen Free
FEATUREs
n-channel
VDS (V) = 20V, ID = 0.6A (VGS=4.5V)
RDS(ON)< 0.65Ω (VGS= 4.5V)
RDS(ON)< 0.75Ω (VGS= 2.5V)
RDS(ON)< 0.95Ω (VGS= 1.8V)
p-channel
VDS (V) = -20V, ID = -0.5A (VGS=-4.5V)
RDS(ON)< 0.8Ω (VGS= -4.5V)
RDS(ON)< 1.0Ω (VGS= -2.5V)
RDS(ON)< 1.3Ω (VGS= -1.8V)
ESD PROTECTED!
Complementary Enhancement Mode Field Effect Transistor ( Rev : V2 )
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor