General Description
The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

FEATUREs
   n-channel                     p-channel
   VDS (V) = 30V             -30V
   ID = 8.5A                      -3A
   RDS(ON)                      RDS(ON)
   < 18mΩ (VGS=10V)     < 130mΩ (VGS = 10V)
   < 28mΩ (VGS=4.5V)    < 180mΩ (VGS = 4.5V)
                                      < 260mΩ (VGS = 2.5V)