General Description
The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The
complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Product AO4610 is Pb-free (meets ROHS & Sony 259 specifications). AO4610L is a Green Product ordering option. AO4610 and AO4610L are electrically identical.
FEATUREs
n-channel p-channel
VDS(V) = 30V -30V
ID= 8.5A(VGS=10V) -7.1A(VGS= -10V)
RDS(ON) RDS(ON)
< 18mΩ(VGS=10V) < 25mΩ(VGS= -10V)
< 28mΩ(VGS=4.5V) < 40mΩ(VGS= -4.5V)
VF<0.5V@1A