6N60Z 데이터 시트보기 (PDF) - Unisonic Technologies

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6N60Z

6.2A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

6N60Z

Preliminary

„ ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 6.2 A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

trr

VGS = 0 V, IS = 6.2 A,

QRR

dIF/dt = 100 A/μs (Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

Power MOSFET

MIN TYP MAX UNIT

1.4 V

6.2 A

24.8 A

290

ns

2.35

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-741.a

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