BR24G64NUX-5(2017) 데이터 시트보기 (PDF) - ROHM Semiconductor

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BR24G64NUX-5
(Rev.:2017)

Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire)

ROHM Semiconductor 

BR24G64xxx-5 Series

Write Command

1. Write

(1) Arbitrary data can be written to EEPROM. When writing only 1 byte, Byte Write is normally used, and when writing

continuous data of 2 bytes or more, simultaneous write is possible by Page Write. Up to 32 arbitrary bytes can be

written.

START

SLAVE WRITE 1st WORD

ADDRESS

ADDRESS

SDA

LINE

1 0 1 0 A2 A1 A0

WAWA

＊ ＊ ＊ 12 11

R/W ACK

Figure 41. Byte Write

ACK

2nd WORD

ADDRESS

WA D7

0

ACK

DATA

STOP

D0

ACK

* Don't Care bit

START

SLAVE

ADDRESS

WRITE

1st WORD

ADDRESS(n)

SDA

LINE

1 0 1 0 A2 A1 A0

WA WA

＊ ＊ ＊ 12 11

2nd WORD

ADDRESS(n)

DATA(n)

WA

D7

0

R/W ACK

ACK

ACK

Figure 42. Page Write

D0

ACK

DATA(n+63)

STOP

D0

ACK

* Don't Care bit

(2) During internal write execution, all input commands are ignored, therefore ACK is not returned.

(3) Data is written to the address designated by word address (n-th address)

(4) By issuing stop bit after 8bit data input, internal write to memory cell starts.

(5) When internal write is started, command is not accepted for tWR (5ms at maximum).

(6) Using page write, it is possible to write one lump sum up to 32 bytes. When data of more than 32 bytes is sent, the

excess of the bytes is overwritten the data sent already from first byte. (Refer to "Internal Address Increment").

(7) As for page write where 2 or more bytes of data is intended to be written, after the word address are designated

arbitrarily, only the value of 5 least significant bits in the address is incremented internally, so that data up to 32

bytes of memory only can be written.

(8) When VCC is turned off during tWR, data at the designated address is not guaranteed, please write it again.

1 page=32bytes, but the write time of page write is 5ms at maximum for 32byte batch write.

It is not equal to 5ms at maximum x 32byte=160ms(Max).

2. Internal Address Increment

Page write mode

WA7 WA6 WA5 WA4 WA3 WA2 WA1 WA0

00000000

00000001

00000010

Increm ent

1Eh 0 0 0 1 1 1 1 0

00011111

00000000

For example, when starting from address 1Eh, then,

1Eh→1Fh→00h→01h···. Please take note that it will be

incremented.

*1Eh···1E in hexadecimal, therefore, 00011110 becomes a

binary number.

Significant bit is fixed.

No digit up

3. Write Protect (WP) Function

When WP pin is set at VCC ('HIGH' level), data rewrite of all addresses is prohibited. When it is set GND ('LOW' level),

data rewrite of all address is enabled. Be sure to connect this pin to VCC or GND, or control it to 'HIGH' level or 'LOW'

level. If WP pin is open, this input is recognized as 'LOW'.

In case of using it as ROM, by connect it to pull-up or VCC, write error can be prevented.

At extremely low voltage at power ON/OFF, by setting the WP pin 'HIGH', write error can be prevented.

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TSZ02201-0GGG0G100910-1-2

30.Nov.2017 Rev.001

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