EBR25UC8ABFD 데이터 시트보기 (PDF) - Elpida Memory, Inc
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EBR25UC8ABFD Datasheet PDF : 12 Pages
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EBR25UC8ABFD
Electrical Specifications
Absolute Maximum Ratings
Symbol
VI,ABS
VDD,ABS
TSTORE
Parameter
min.
Voltage applied to any RSL or CMOS signal pad with
respect to GND
−0.3
Voltage on VDD with respect to GND
−0.5
Storage temperature
−50
max.
Unit
VDD + 0.3
V
VDD + 1.0
V
+100
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Recommended Electrical Conditions
Symbol
Parameter and conditions
min.
max.
Unit
VDD
Supply voltage*1
2.50 − 0.13
2.50 + 0.13
V
VCMOS
CMOS I/O power supply at pad
2.5V controllers
2.50 − 0.13
2.50 + 0.25
V
1.8V controllers
1.8 − 0.1
1.8 + 0.2
V
VREF
Reference voltage*1
1.4 − 0.2
1.4 + 0.2
V
SVDD
Serial Presence
supply
Detector-
positive
power
2.2
3.6
V
Note: See Direct RDRAM datasheet for more details.
Data Sheet E0317E20 (Ver. 2.0)
7
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