EBR25UC8ABFD 데이터 시트보기 (PDF) - Elpida Memory, Inc
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EBR25UC8ABFD Datasheet PDF : 12 Pages
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DATA SHEET
256MB Direct Rambus DRAM RIMM Module
EBR25UC8ABFD (128M words × 16 bits)
Description
The Direct Rambus RIMM module is a general-purpose
high-performance memory module subsystem suitable
for use in a broad range of applications including
computer memory, personal computers, workstations,
and other applications where high bandwidth and low
latency are required.
The EBR25UC8ABFD consists of 8 pieces of 288M
Direct Rambus DRAM (Direct RDRAM) devices.
These are extremely high-speed CMOS DRAMs
organized as 16M words by 18 bits. The use of
Rambus Signaling Level (RSL) technology permits
1066MHz or 800MHz transfer rates while using
conventional system and board design technologies.
The architecture of the Direct RDRAM enables the
highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions.
The separate control and data buses with independent
row and column control yield over 95% bus efficiency.
The Direct RDRAM device's 32 banks support up to
four simultaneous transactions per device.
Features
• 256MB Direct RDRAM storage and 256 banks total
on module
• High speed 1066MHz/800MHz Direct RDRAM
devices
• 184 edge connector pads with 1mm pad spacing
Module PCB size: 133.35mm × 34.925mm ×
1.27mm
Gold plated edge connector pads contacts
• Serial Presence Detect (SPD) support
• Operates from a 2.5V supply
• Low power and power down self refresh modes
• Separate Row and Column buses for higher
efficiency
• RDRAM devices use Chip Scale Package (CSP)
FBGA (µBGA) package
Document No. E0317E20 (Ver. 2.0)
Date Published April 2003 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2002-2003
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