SKW20N60 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

SKW20N60

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW20N60

600ns

500ns

400ns

IF = 40A

300ns

200ns

IF = 10A

IF = 20A

100ns

0ns

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(VR = 200V, Tj = 125°C)

24A

20A

16A

IF = 40A

12A

IF = 20A

IF = 10A

8A

4A

0A

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current slope

(VR = 200V, Tj = 125°C)

2500nC

2000nC

1500nC

1000nC

500nC

IF = 40A

I = 20A

F

IF = 10A

0nC

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current slope

(VR = 200V, Tj = 125°C)

1 0 0 0 A /µs

8 0 0 A /µs

6 0 0 A /µs

4 0 0 A /µs

2 0 0 A /µs

0 A /µs

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

(VR = 200V, Tj = 125°C)

9

Mar-00

Share Link: