SKW20N60 데이터 시트보기 (PDF) - Infineon Technologies

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SKW20N60

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW20N60

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tb

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

tS

tF

Qrr

Irrm

dirr/dt

Tj=25°C,

VCC=400V,IC=20A,

VGE=0/15V,

RG=16Ω,

Energy losses include

“tail” and diode

reverse recovery.

Tj=25°C,

VR=200V, IF=20A,

diF/dt=200A/µs

min.

-

-

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

36

30

225

54

0.44

0.33

0.77

300

30

270

490

5.5

180

Unit

max.

46 ns

36

270

65

0.53 mJ

0.43

0.96

- ns

-

-

- nC

-A

- A/µs

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tb

trr

tS

tF

Qrr

Irrm

dirr/dt

Tj=150°C

VCC=400V,

IC=20A,

VGE=0/15V,

RG=16Ω

Energy losses include

“tail” and diode

reverse recovery.

Tj=150°C

VR=200V, IF=20A,

diF/dt=200A/µs

min.

-

-

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

36

30

250

63

0.67

0.49

1.12

410

45

365

1270

8.5

200

Unit

max.

46 ns

36

300

76

0.81 mJ

0.64

1.45

- ns

-

-

- nC

-A

- A/µs

3

Mar-00

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