SKW20N60 데이터 시트보기 (PDF) - Infineon Technologies

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SKW20N60

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

40A

35A

30A

25A

150°C

20A

100°C

15A

25°C

10A

5A

-55°C

0A

0.0V

0.5V

1.0V

1.5V

2.0V

VF, FORWARD VOLTAGE

Figure 25. Typical diode forward current as

a function of forward voltage

SKW20N60

2.0V

I F = 40A

1.5V

I F = 20A

1.0V

-40°C 0°C 40°C 80°C 120°C

Tj, JUNCTION TEMPERATURE

Figure 26. Typical diode forward voltage as

a function of junction temperature

100K/W D=0.5

0.2

0.1

10-1K/W 0.05

0.02

10-2K/W 0.01

R,(1/W)

0.358

0.367

0.329

0.216

0.024

τ, (s)=

9.02*10-2

9.42*10-3

9.93*10-4

1.19*10-4

1.92*10-5

R1

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-3K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse width

(D = tp / T)

10

Mar-00

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