SKW20N60 데이터 시트보기 (PDF) - Infineon Technologies

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SKW20N60

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW20N60

3.0mJ

*) Eon and Ets include losses

Ets*

due to diode recovery.

2.5mJ

2.0mJ

Eon*

1.5mJ

1.0mJ

Eoff

0.5mJ

0.0mJ

0A

10A 20A 30A 40A 50A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 1 6 Ω)

3.0mJ

2.5mJ

*) Eon and Ets include losses

due to diode recovery.

2.0mJ

Ets*

1.5mJ

1.0mJ

Eon*

Eoff

0.5mJ

0.0mJ

0Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 20A)

1.6mJ

1.4mJ

*) Eon and Ets include losses

due to diode recovery.

1.2mJ

Ets*

1.0mJ

0.8mJ

Eon*

0.6mJ

Eoff

0.4mJ

0.2mJ

0.0mJ

0°C

50°C

100°C

150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 20A, RG = 1 6Ω)

100K/W

D=0.5

0.2

10-1K/W 0.1

0.05

0.02

10-2K/W

0.01

10-3K/W

single pulse

R,(1/W)

0.1882

0.3214

0.1512

0.0392

τ, (s)=

0.1137

2.24*10-2

7.86*10-4

9.41*10-5

R1

R2

C1=τ1/R1 C2=τ2/R2

10-4K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

7

Mar-00

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