A3G4250D 데이터 시트보기 (PDF) - STMicroelectronics

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A3G4250D

MEMS motion sensor: 3-axis digital output gyroscope

STMicroelectronics 

A3G4250D

Mechanical and electrical characteristics

2.2

Electrical characteristics

@ Vdd = 3.0 V, T = -40... +85 °C, unless otherwise noted(c).

Table 5. Electrical characteristics

Symbol

Parameter

Test condition

Min.

Typ.(1)

Max.

Vdd

Vdd_IO

Idd

Supply voltage

I/O pins supply voltage(2)

Supply current

2.4

3.0

3.6

1.71

Vdd+0.1

4.8

6.1

7.0

IddSL

IddPdn

Top

Supply current

in sleep mode(3)

Supply current in

power-down mode(4)

Operating temperature

range

Selectable by digital

interface

Selectable by digital

interface

1.5

5

10

-40

+85

1. Typical specifications are not guaranteed; typical values at +25 °C.

2. It is possible to remove Vdd maintaining Vdd_IO without blocking the communication busses, in this condition the

measurement chain is powered off.

3. Sleep mode introduces a faster turn-on time compared to power-down mode.

4. Verified at wafer level.

Unit

V

V

mA

mA

µA

°C

2.3

Temperature sensor characteristics

@ Vdd = 3.0 V, T = 25 °C, unless otherwise noted(d).

Table 6. Temp. sensor characteristics

Symbol

Parameter

Test condition

Temperature sensor

TSDr output change vs.

temperature

TODR Temperature refresh rate

-

Top

Operating temperature

range

1. Typical specifications are not guaranteed; typical values at +25 °C.

Min.

-40

Typ.(1)

-1

1

Max.

Unit

°C/digit

Hz

+85

°C

c. The product is factory calibrated at 3.0 V.

d. The product is factory calibrated at 3.0 V.

Doc 022768 Rev 3

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