IKP20N60T(2008) 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

IKP20N60T
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKP20N60T

IKW20N60T

D=0.5

0.2

10-1K/W 0.1

0.05

1 0 -2K /W

0.02

R,(K/W)

0.18715

0.31990

0.30709

0.07041

R1

τ, (s)

6.925*10-2

1.085*10-2

6.791*10-4

9.59*10-5

R2

0.01

C1=τ1/R1 C2=τ2/R2

single pulse

1µs 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = tp / T)

100K/W D=0.5

10-1K/W

0.2

R,(K/W) τ, (s)

0.13483

9.207*10-2 6

0.1

0.58146

0.44456

1.821*10-2

1.47*10-3

0.33997

1.254*10-4

0.05 R1

R2

0.02

0.01

C1=τ1/R1 C2=τ2/R2

single pulse

10-2K/W

1µs 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 22. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

250ns

200ns

150ns

100ns

TJ=175°C

50ns

TJ=25°C

0ns

600A/µs

900A/µs

1200A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=400V, IF=20A,

Dynamic test circuit in Figure E)

1.8µC

1.6µC

1.4µC

TJ=175°C

1.2µC

1.0µC

0.8µC

0.6µC

TJ=25°C

0.4µC

0.2µC

600A/µs

900A/µs

1200A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

(VR = 400V, IF = 20A,

Dynamic test circuit in Figure E)

Power Semiconductors

9

Rev. 2.5 Sep. 08

Share Link: