IKP20N60T(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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IKP20N60T
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKP20N60T

IKW20N60T

2.4mJ

*) Eon and Ets include losses

due to diode recovery

Ets*

2.0mJ

1.6mJ

1.2mJ

0.8mJ

Eoff

0.4mJ

0.0mJ

0A

Eon*

5A 10A 15A 20A 25A 30A 35A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, RG = 12Ω,

Dynamic test circuit in Figure E)

2.4m J *) Eon and Ets include losses

due to diode recovery

E ts*

2 .0 m J

1 .6 m J

E off

1 .2 m J

0 .8 m J

0 .4 m J

Eon*

0 .0 m J

0Ω

15Ω

30Ω

45Ω

60Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 20A,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

1.0mJ

Ets*

0.8mJ

0.6mJ

Eoff

0.4mJ

Eon*

0.2mJ

0.0mJ

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 20A, RG = 12Ω,

Dynamic test circuit in Figure E)

2 .0 m J

1 .8 m J

1 .6 m J

*) Eon and Ets include losses

due to diode recovery

1 .4 m J

1 .2 m J

1.0mJ Ets*

0 .8 m J

E off

0 .6 m J

0 .4 m J

0 .2 m J

E on*

0 .0 m J

300V 350V 400V 450V 500V 550V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 20A, RG = 12Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 2.5 Sep. 08

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