IKP20N60T(2008) 데이터 시트보기 (PDF) - Infineon Technologies
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IKP20N60T
(Rev.:2008)
(Rev.:2008)
Infineon Technologies
IKP20N60T Datasheet PDF : 14 Pages
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TrenchStop® Series
IKP20N60T
IKW20N60T
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t b
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=20A,
VGE=0/15V,
RG=12 Ω,
Lσ2)=131nH,
Cσ2)=31pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=400V, IF=20A,
diF/dt=880A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
18
14
199
42
0.31
0.46
0.77
41
0.31
13.3
711
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t b
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175°C,
VCC=400V,IC=20A,
VGE=0/15V,
RG= 12 Ω
Lσ1)=131nH,
Cσ1)=31pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=175°C
VR=400V, IF=20A,
diF/dt=880A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
18
18
223
76
0.51
0.64
1.15
176
1.46
18.9
467
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.5 Sep. 08
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