IKP20N60T(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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IKP20N60T
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKP20N60T

IKW20N60T

100ns

td(on)

10ns

td(off)

tf

tr

1ns

0A 5A 10A 15A 20A 25A 30A 35A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, RG = 12Ω,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ = 175°C,

VCE= 400V, VGE = 0/15V, IC = 20A,

Dynamic test circuit in Figure E)

100ns

td(off)

tf

td(on)

10ns

25°C

50°C

tr

75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 20A, RG=12Ω,

Dynamic test circuit in Figure E)

7V

6V

max.

typ.

5V

4V min.

3V

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.29mA)

Power Semiconductors

6

Rev. 2.5 Sep. 08

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