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HEF4050BT 데이터 시트보기 (PDF) - NXP Semiconductors.

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HEF4050BT
NXP
NXP Semiconductors. NXP
HEF4050BT Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
NXP Semiconductors
HEF4050B
Hex non-inverting buffers
10. Static characteristics
Table 6. Static characteristics
VSS = 0 V; VI = VSS or VDD unless otherwise specified.
Symbol Parameter
Conditions
VDD
VIH
HIGH-level input voltage |IO| < 1 µA
VIL
LOW-level input voltage |IO| < 1 µA
VOH
HIGH-level output voltage |IO| < 1 µA
VOL
LOW-level output voltage |IO| < 1 µA
IOH
HIGH-level output current VO = 2.5 V
VO = 4.6 V
VO = 9.5 V
VO = 13.5 V
IOL
LOW-level output current VO = 0.4 V
VO = 0.5 V
VO = 1.5 V
II
input leakage current
IDD
supply current
IO = 0 A
CI
input capacitance
11. Dynamic characteristics
5V
10 V
15 V
5V
10 V
15 V
5V
10 V
15 V
5V
10 V
15 V
5V
5V
10 V
15 V
4.75 V
10 V
15 V
15 V
5V
10 V
15 V
Tamb = 40 °C Tamb = 25 °C
Min Max Min Max
3.5
-
3.5
-
7.0
-
7.0
-
11.0 - 11.0 -
-
1.5
-
1.5
-
3.0
-
3.0
-
4.0
-
4.0
4.95 - 4.95 -
9.95 - 9.95 -
14.95 - 14.95 -
- 0.05 - 0.05
- 0.05 - 0.05
- 0.05 - 0.05
1.7 - 1.4 -
0.52 - 0.44 -
1.3 - 1.1 -
3.6 - 3.0 -
3.5
-
2.9
-
12.0 - 10.0 -
24.0 - 20.0 -
- ±0.3 - ±0.3
-
4.0
-
4.0
-
8.0
-
8.0
- 16.0 - 16.0
-
-
-
7.5
Tamb = 85 °C Unit
Min Max
3.5
-V
7.0
-V
11.0 - V
-
1.5 V
-
3.0 V
-
4.0 V
4.95 - V
9.95 - V
14.95 - V
- 0.05 V
- 0.05 V
- 0.05 V
1.1 - mA
0.36 - mA
0.9 - mA
2.4 - mA
2.3
- mA
8.0
- mA
16.0 - mA
- ±1.0 µA
-
30 µA
-
60 µA
-
120 µA
-
- pF
Table 7. Dynamic characteristics
VSS = 0 V; Tamb = 25 °C; for test circuit see Figure 6; unless otherwise specified.
Symbol Parameter
Conditions
VDD
Extrapolation formula
tPHL
HIGH to LOW
nA to nY;
5 V [1] 26 ns + (0.18 ns/pF)CL
propagation delay see Figure 5 10 V
16 ns + (0.08 ns/pF)CL
15 V
12 ns + (0.05 ns/pF)CL
tPLH
LOW to HIGH
nA to nY;
5 V [1] 28 ns + (0.55 ns/pF)CL
propagation delay see Figure 5 10 V
14 ns + (0.23 ns/pF)CL
15 V
12 ns + (0.16 ns/pF)CL
Min Typ Max Unit
-
35
70 ns
-
20
35 ns
-
15
30 ns
-
55 110 ns
-
25
55 ns
-
20
40 ns
HEF4050B_5
Product data sheet
Rev. 05 — 11 November 2008
© NXP B.V. 2008. All rights reserved.
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