STTH506 데이터 시트보기 (PDF) - STMicroelectronics
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STTH506 Datasheet PDF : 9 Pages
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Characteristics
STTH506
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
IF=IF(AV)
VR=400V
Reference: Tj=125°C
IRM and S factor
QRR
Tj(°C)
50
75
100
125
Figure 11. Forward recovery time versus
dIF/dt (typical values)
220 tfr(ns)
200
180
160
140
120
100
80
60
40
20
0
0
100
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
dIF/dt(A/µs)
200
300
400
500
Figure 13.
Thermal resistance junction to
ambient versus copper surface
under tab (printed circuit board
FR4, eCU = 35 µm)
100 Rth(j-a)(°C/W)
90
DPAK
80
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
5
10
15
20
25
30
35
40
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values)
26 VFP(V)
24
IF=IF(AV)
Tj=125°C
22
20
18
16
14
12
10
8
6
4
2
dIF/dt(A/µs)
0
0
100
200
300
400
500
Figure 12. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
VR(V)
1
1
10
100
1000
4/9
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