STTH506 데이터 시트보기 (PDF) - STMicroelectronics
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STTH506 Datasheet PDF : 9 Pages
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STTH506
Characteristics
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration (TO-220AC, DPAK)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAC)
1.0 Zth(j-c)/Rth(j-c)
0.9 Single pulse
TO-220AC
0.8
DPAK
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.0 Zth(j-c)/Rth(j-c)
0.9 Single pulse
TO-220FPAC
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
Figure 5. Peak reverse recovery current
versus dIF/dt (typical values)
14 IRM(A)
VR=400V
12
Tj=125°C
10
8
IF=0.5 x IF(AV)
IF=IF(AV)
IF=2 x IF(AV)
6
IF=0.25 x IF(AV)
4
2
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery time versus
dIF/dt (typical values)
250 trr(ns)
200
150
100
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
VR=400V
Tj=125°C
50
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 7. Reverse recovery charges versus
dIF/dt (typical values)
350 Qrr(nC)
300
VR=400V
Tj=125°C
250
IF=2 x IF(AV)
IF=IF(AV)
200
150
IF=0.5 x IF(AV)
100
50
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8. Softness factor versus
dIF/dt (typical values)
S factor
2.50
2.25
2.00
IF = 2 x IF(AV)
VR = 400 V
Tj = 125° C
1.75
1.50
1.25
1.00
0.75
0.50
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
3/9
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