STTH506 데이터 시트보기 (PDF) - STMicroelectronics
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STTH506 Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STTH506
Table 2. Thermal parameters
Symbol
Parameter
Rth(j-c)
Junction to case
TO-220AC, DPAK
TO-220FPAC
Value
3.5
6
Unit
° C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Tj = 25° C
Tj = 150° C
Tj = 25° C
Tj = 150° C
VR = VRRM
IF = 5 A
5
µA
13
130
1.85
V
1.10 1.40
To evaluate the conduction losses use the following equation:
P = 1.07 x IF(AV) + 0.066 IF2(RMS)
Table 4.
Symbol
trr
IRM
tfr
VFP
Dynamic characteristics
Parameter
Test conditions
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
IF = 0.5 A, Irr = 0.25 A, IR = 1 A,
Tj = 25° C
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
IF = 5 A, dIF/dt = -100 A/µs,
VR = 400 V, Tj = 25° C
IF = 5 A dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25° C
IF = 5 A dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25° C
Min. Typ Max. Unit
30
ns
35 50
3.5 5
180 ns
4
V
Figure 1. Conduction losses versus
average current
9 PF(AV)(W)
8
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
7
6
δ=1
5
4
3
T
2
1
IF(AV)(A)
δ=tp/T
tp
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Figure 2. Forward voltage drop versus
forward current
100 IFM(A)
90
80
Tj=150°C
70
(maximum values)
60
50
Tj=150°C
(typical values)
40
30
Tj=25°C
(maximum values)
20
10
VFM(V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2/9
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