K9F2G08Q0M 데이터 시트보기 (PDF) - Samsung

부품명

상세내역

일치하는 목록

K9F2G08Q0M

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Samsung 

K9F2G08Q0M K9F2G16Q0M

K9F2G08U0M K9F2G16U0M

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

PRODUCT LIST

Part Number

K9F2G08Q0M-Y,P

K9F2G16Q0M-Y,P

K9F2G08U0M-Y,P

K9F2G16U0M-Y,P

Vcc Range

1.70 ~ 1.95V

2.7 ~ 3.6V

Organization

X8

X16

X8

X16

Preliminary

FLASH MEMORY

PKG Type

TSOP1

FEATURES

• Voltage Supply

-1.8V device(K9F2GXXQ0M): 1.70V~1.95V

-3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V

• Organization

- Memory Cell Array

-X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit

-X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit

- Data Register

-X8 device(K9F2G08X0M): (2K + 64)bit x8bit

-X16 device(K9F2G16X0M): (1K + 32)bit x16bit

- Cache Register

-X8 device(K9F2G08X0M) : (2K + 64)bit x8bit

-X16 device(K9F2G16X0M) : (1K + 32)bit x16bit

• Automatic Program and Erase

- Page Program

-X8 device(K9F2G08X0M) : (2K + 64)Byte

-X16 device(K9F2G16X0M) : (1K + 32)Word

- Block Erase

-X8 device(K9F2G08X0M) : (128K + 4K)Byte

-X16 device(K9F2G16X0M) : (64K + 2K)Word

• Page Read Operation

- Page Size

- X8 device(K9F2G08X0M) : 2K-Byte

- X16 device(K9F2G16X0M) : 1K-Word

- Random Read : 25µs(Max.)

- Serial Access : 50ns(Min.)

30ns(Min., K9F2G08U0M only)

• Fast Write Cycle Time

- Page Program time : 300µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Cache Program Operation for High Performance Program

• Power-On Auto-Read Operation

• Intelligent Copy-Back Operation

• Unique ID for Copyright Protection

• Package :

- K9F2GXXX0M-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F2GXXX0M-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

GENERAL DESCRIPTION

Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-

effective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112-

byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)

or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(30ns, only X8 device) cycle time per byte or word(X16

device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller

automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

Even the write-intensive systems can take advantage of the K9F2GXXX0M′s extended reliability of 100K program/erase cycles by

providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2GXXX0M is an optimum solution for large

nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

3

Share Link: