K9F2G08Q0M 데이터 시트보기 (PDF) - Samsung
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K9F2G08Q0M Datasheet PDF : 38 Pages
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K9F2G08Q0M K9F2G16Q0M
K9F2G08U0M K9F2G16U0M
Preliminary
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
ALE to Data Loading Time
Symbol
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
tADL
K9F2G16U0M(3.3V)
K9F2GXXQ0M(1.8V)
Min
Max
25
-
10
-
35
-
10
-
25
-
25
-
10
-
20
-
10
-
45
-
15
-
100
-
K9F2G08U0M(3.3V)
Min
Max
10
-
5
-
15
-
5
-
15
-
10
-
5
-
10
-
5
-
30
-
10
-
100
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
AC Characteristics for Operation
Parameter
Symbol
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
tR
tAR
tCLR
tRR
tRP
tWB
tRC
tREA
tCEA
tRHZ
tCHZ
tOH
tREH
tIR
tWHR
tRST
K9F2G16U0M(3.3V)
K9F2GXXQ0M(1.8V)
Min
Max
-
25
10
-
10
-
20
-
25
-
-
100
50
-
-
30
-
45
-
30
-
20
15
-
15
-
0
-
60
-
-
5/10/500(1)
K9F2G08U0M(3.3V)
Min
Max
-
25
10
-
10
-
20
-
15
-
-
100
30
-
-
18
-
23
-
30
-
20
15
-
10
-
0
-
60
-
-
5/10/500(1)
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
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